At present, Japan Nichia Corporation monopolizes the patented technology of GaN-based LEDs on sapphire substrates. CREE Corporation of the United States monopolizes the patented technology of GaN-based LEDs on SiC substrates. Therefore, the development of GaN-based LED production technology on other substrates has become a hot spot in the world.
1 Si substrate LED chip manufacturing
1.1 Technical route
GaN was grown on a Si substrate to fabricate an LED blue chip.
Process flow: growing AlN buffer layer on Si substrate→ growing n-type GaN→ growing InGaN multi-quantum well light-emitting layer→ growing P-type AlGaN layer→ growing p-type GaN layer→ bonding Ag reflective layer and forming p-type ohmic contact Electrode → stripping the substrate and removing the buffer layer → making an ohmic contact electrode of an n-type doped Si layer → alloy → passivation → dicing → testing → packaging.
1.2 Main manufacturing processes
The structure of the GaN-based LED chip on the si substrate is shown in Fig. 1.
Figure 1 Schematic diagram of GaN-based LED chip on si substrate
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